The electronic materials group studies the physics and engineering of new and emerging electronic materials and devices, with a focus on functional oxides, defect engineering in 2D materials and ion- beam modification of materials. The Functional Oxides research is focussed on memristive switching in thin-film metal oxides and its application as non-volatile memory and hardware-based neuromorphic computing devices; our Defect Engineering in 2D Materials research is investigating the use of energetic ion-irradiation as a means creating defects in 2D materials for tailoring their physical and chemical properties, and our Ion-Beam Modification of Materials research is focussed on the development of ion-implantation strategies for controlling the contact resistance in next generation Si-based devices. Although presented as distinct areas of research there are many synergies and overlaps in these research activities, with experience and expertise shared among the team members.
Studying the application of ion-implantation for advanced electronic and photonic device development. Current research is focused on defect engineering in 2D materials as a means of tailoring their physical and chemical properties, and the reduction of contact resistance in next generation silicon-based devices.
Studying the application of ion-implantation for advanced electronic and photonic device development. Current research is focused on defect engineering in 2D materials as a means of tailoring their physical and chemical properties, and the reduction of contact resistance in next generation silicon-based devices.
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