Single photon emitters (SPEs) are key resources for many quantum technologies including quantum computation and quantum communications. To date, the most investigated solid state SPE systems are epitaxial quantum dots, colour centres in solids, and more recently 2D materials. Numerous materials are being examined as potential platform for ideal SPEs, yet each materials possess both advantages and disadvantages. In this talk, I will discuss two wide-band gap material platforms: GaN and hBN.

Group III-nitride materials have drawn a great deal of renewed interest due to their versatile characteristics as quantum emitters including room-temperature operation, widely tuneable wavelengths from ultraviolet to infrared, and a high degree of linear polarization. Here I will introduce recent investigation for bright and efficient SPEs from InGaN QDs on pyramidal GaN structures.

SPEs in hBN were first reported in 2015 and are promising because they are bright, with more than a million counts per second at room temperature, optically stable at ambient conditions, fully polarized and with a narrow zero photon line (ZPL). These factors make this 2D material an outstanding candidate for quantum nanophotonics with diverse promising applications. I will discuss fundamental characteristics of SPEs in hBN including temperature and strain dependency. On the device fabrication front, I will discuss coupling emitters to the Plasmonic and dielectric resonators. Finally, I will discuss promising applications of hBN photonic devices.