In this work we study light matter interactions with the magnetic component of light. Silicon nanodimer arrays are used to modify the local density of optical states (LDOS). Dimers provide polarization-dependent electric and magnetic field enhancement in the dimer gap to modify the electric dipolar (ED) and magnetic dipolar (MD) emissions of the Eu3+ at 610 nm and 590 nm, respectively. Finite element method simulations are used to determine the optimal parameters for the sample and to demonstrate the polarization-dependent emission enhancement of dipolar emitters in the gap. We use Lorenz reciprocity theorem to calculate the far-field emission pattern into free space. Two-step electron beam lithography processes are used to fabricate the hybrid nanoscopic structures, where Eu(TTA)3 doped electron beam resist localized in the Dimer gap, for maximum over lab between the mode volume and emitters location. The deterministic localization of emitters is crucial in select the desired interaction between the nano- structure and the emitters. This work demonstrates magnetic light-matter interactions as a novel degree of freedom in nano photonics.  Moreover, it enables applications in research areas such as sensing and quantum information processing.