III-V semiconductor nanowires have shown great promises for optoelectronic device applications such as photodetectors, solar cells, light-emitting diodes and lasers. That is because they have excellent optical and electrical properties owing to their direct bandgap, large absorption coefficient and charge-carrier mobility,
as well as high flexibility to form heterostructures on lattice mismatched substrates such as Si. In particular,
III-V ternary semiconductor nanowires such as GaAsSb nanowires have direct and tunable bandgap that can
extend the photodetection wavelength up to 1700 nm (GaSb) and thus show great potential for infrared
photodetection. Moreover, they present tunable spectral response at selective wavelengths originating from
the strong and tunable resonance modes that are supported in the GaAsSb array nanowires, indicating their
potential for multispectral imaging. Therefore, in this talk, I will review our work on the study of GaAsSb
nanowire based room-temperature high-performance infrared photodetectors and their application of
multispectral imaging.

Dr Ziyuan Li received her B.Eng. degree in Electrical Engineering from Beijing Institute of Technology in 2009 and Ph.D. from the University of New South Wales in 2013. Currently she is working as an ARC Discovery Early Career Research Award Fellow in Research School of Physics, The Australian National University (ANU). She has published over 80 peer-review publications (55 journal papers), 2 book chapters, and 2 patents. She also delivered several invited presentations and/or served as an early- and midcareer researcher committee member and session chair person at international conferences, including International Conference on Metamaterials, Photonic Crystals and Plasmonics (META2019), Pacific Rim International Conference on Advanced Materials and Processing (PRICM-10), International Union of Materials Research Societies International Conference in Asia (IUMRS-ICA2019) and International Photovoltaic Science and Engineering Conference (PVSEC-31). She is a senior member of IEEE and currently the chapter chair of IEEE Nanotechnology Council ACT Section. Her research interests are in III-V semiconductor optoelectronic devices such as photodetectors, solar cells, light-emitting diodes and lasers.

This Seminar will be hosted by the Department of Electronic Materials Engineering.

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