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Ion Beam Modification of Materials |
The Department's Ion-Beam Modification and Analysis of Materials research ranges from fundamental studies of ion-solid interaction processes to materials science studies employing ion-irradiation and/or ion-beam analysis. These studies employ the Department's state-of-the-art accelerator facilities that include, a low energy (150 kV) ion implanter, a high-energy, high current ion-implanter (1.7 MV terminal potential), and a separate tandem accelerator (1.7 MV terminal potential) for ion beam analysis.
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Ion Beam Mixing of Metal/Dielectric Interfaces
Robert G Elliman
In a collaboration with Prof. Balogh from the University of Darmstadt, Germany, a systematic study of ion-beam mixing has been undertaken on Ta/SiO2 and Ta/Si interfaces in order to understand the mechanisms underpinning such processes. The interest in such systems derives from the application of these material interfaces in modern semiconductor devices which are subjected to ion-implantation and in radiation environments, such as nuclear reactors.
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Nanocavity evolution under ion irradiation
Mark Ridgway, Jim Williams
Nanocavities formed in Si substrates by H or He implantation and thermal annealing are effective gettering sites for metallic contaminants. Subsequent to formation, Si ion irradiation of a nanocavity band yields a decrease in nanocavity diameter and an eventual disappearance of the band. We examine this essentially athermal evolution in both crystalline and amorphous substrates and results are consistent with a ballistic process.
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