MOCVD Laboratory hosts two MOCVD reactors. We have recently installed a state of the art Aixtron AX200/4 (3 x 2 inch, 1x3 inch and 1x 4 inch wafer) MOCVD reactor with gas foil rotation. This allows us to grow a range of III-V compound semiconductor structures based on GaAs, AlGaAs, InGaAs, InP, InGaAsP. This reactor is widely used for the growth of quantum wells, quantum wires, quantum dots, strained layers and devices such as lasers, photodetectors, modulators, VCSELs, SESAMs.

The second reactor (modified MR Semiconductor Reactor with Thomas Swan Cell) is used for growth of structures with novel materials such as GaAsN, InGaAsN. We are planning to install a Manganese source to grow GaMnAs and other ferromagnetic semiconductors for spintronics applications.

A range of thin film deposition facilities such as thermal evaporator, e-beam evaporator, plasma enhanced chemical vapour deposition system are available for depositing a variety of metal and dielectric films.

Ion-Beam Modification and Analysis of Materials research ranges from fundamental studies of ion-solid interaction processes and the development and application of ion beam analysis techniques, to materials science studies employing ion-irradiation and/or ion-beam analysis. The research is centred around state-of-the-art accelerator facilities, including two ion-implanters (150 kV and 1.7 MV tandem) and a versatile ion-beam analysis machines (a 1.7 MV tandem) together with an impressive array of complementary techniques. Extensive use is also made of the 14MV tandem accelerator operated by the Nuclear Physics Department for high-energy, heavy-ion beam studies.

Equipment:
High Energy Implanter
Low Energy Implanter
RBS Accelerator
Nuclear Physics 14UD Accelerator

Photonic Devices Laboratory consists of a Class 1000 clean room with Class 100 yellow room. This laboratory currently hosts Karl Suss Mask aligner for optical lithography, spinner, e-beam evaporator, laser direct system, Oxford PlasmaLab 80 Plasma Enhanced Chemical Vapour Deposition (PECVD) and Reactive Ion Etching (RIE) system. This laboratory is widely used for fabrication of a range of optoelectronic devices such as lasers, VCSELs, waveguides, photodetectors, modulators. We have just purchased an Oxford PlasmaLab100 Inductively Couple Plasma (ICP) Etching system and waiting for its delivery.

EME has an extensive array of analytical facilities for the structural, compositional, optical, magnetic and electronic characterisation of materials. Selected examples include:

• tandem ion accelerator for Rutherford backscattering/channeling
• double crystal x-ray diffraction
• scanning and transmission electron microscopy sample preparation
• secondary ion mass spectrometry
• powder x-ray diffraction
• photoluminescence
• deep level transient spectroscopy
• Hall effect apparatus
• capacitance-voltage carrier profiling

Characterisation facilities external to the Department are also utilised routinely. Selected examples on-campus include the scanning and transmission electron microscopes of the Electron Microscopy Unit and the tandem ion accelerator of the Nuclear Physics Department, Research School of Physics and Engineering. EME personnel use the latter for elastic recoil detection and perturbed angular correlation studies. Further afield, synchrotrons and storage rings world-wide are used by EME personnel to determine both the electronic and structural properties of materials.