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Publications   Journal Articles G. Ciofani, V. Raffa1, J. Yu, Y. Chen, Y. Obata, S. Takeoka3, A. Menciassi, A. Cuschieri Boron Nitride Nanotubes: A Novel Vector for Targeted Magnetic Drug Delivery Current Nanoscience 5 (2009) 33-38 R.E. Harding, G. Davies, S. Hayama, P.G. Coleman, C.P. Burrows, J. Wong-Leung Photoluminescence response of ion-implanted silicon Appl. Phys. Lett. 89 (2006) 181917 G.A. Abbas, P. Papakonstantinou, J.A. McLaughlin, T.D.M. Dall, R.G. Elliman, J. Filik Hydrogen softening and optical transparency in Si-incorporated hydrogenated amorphous carbon films J. Appl. Phys. 98 (2005) 103505(1-6) V.S. Amaratunga, Haroldo, M. Premaratne, H. H. Tan, C. Jagadish Photonic crystal phase detectors J.Opt. Soc. Amer. B 25 (2008) 1532-1536 L.L. Araujo, R. Giulian, D.J. Sprouster, C.S. Schnohr, D. Llewellyn, P. Kluth, D. J. Cookson, G. J. Foran, M.C. Ridgway Size-dependent characterization of embedded Ge nanocrystals: Structural and thermal properties Physical Review B 78 (2008) 094112/1-15 L.L. Araujo, G. J. Foran, M.C. Ridgway Multiple scattering effects on the EXAFS of Ge nanocrystals Journal of Physics: Condensed Matter 20 (2008) 165210/1-9 L.L. Araujo, R. Giulian, B. Johannessen, D. Llewellyn, P. Kluth, G. M. Azevedo, D. J. Cookson, M.C. Ridgway Structural characterization of Ge nanocrystals in silica amorphised by ion irradiation Nucl. Instr. Meth. B 266 (2008) 3153-3157 L.L. Araujo, P. Kluth, G. de M. Azevedo, M.C. Ridgway Short-range thermal and structural properties of Ge nanocrystals Nuclear Instruments and Methods B 257 (2007) 56-59 L.L. Araujo, P. Kluth, G. De M. Azevedo, M.C. Ridgway Vibrational properties of Ge nanocrystals determined by EXAFS Physical Review B 74 (2006) 184102/1-8 L.L. Araujo, M. Behar, P. L. Grande, J. F. Dias Random energy loss and straggling study of Be-9 ions in silicon Nuclear Instruments and Methods B 219-220 (2004) 246-250 L.L. Araujo, P. L. Grande, M. Behar, J. F. Dias, A. F. Lifschitz, N. R. Arista, G. Schiwietz Electronic energy loss of channeled ions: The giant Barkas effect Physical Review A 70 (2004) 032903/1-8 L.L. Araujo, P. L. Grande, M. Behar, J. H. R. dos Santos Random stopping power and energy straggling of O-16 ions into amorphous Si target Nuclear Instruments and Methods B 190 (2002) 79-83 L.L. Araujo, P. L. Grande, M. Behar, J. F. Dias, J. H. R. dos Santos, G. Schiwietz Channeling energy loss of O ions in Si: The Barkas effect Nuclear Instruments and Methods B 193 (2002) 172-177 L.L. Araujo, M. Behar Al and Ag diffusion study in alpha-titanium Applied Physics A 71 (2000) 169-174 A. Ashrafi, Y. Segawa Blueshift in MgZnO alloys: Nature of bandgap bowing J. Appl. Phys. 104 (2008) 123528 A. Ashrafi Stoichiometry enhanced exciton–phonon interactions in ZnO epilayers J. Phys. D: Appl. Phys. 41 (2008) 195415 A. Ashrafi Heterointerfaces of stable and metastable ZnO phases App. Surf. Sci. 255 (2008) 2342 A. Ashrafi, Y. Segawa Anomalous lattice relaxation mechanics in ZnO/SiC heterostructures J. Appl. Phys. 103 (2008) 093527 (5 pages) A. Ashrafi, C. Jagadish Review of zincblende ZnO: Stability of metastable ZnO phases J. Appl. Phys. 102 (2007) 071101 (12 pages) A. Ashrafi, Y. Segawa Strain effects in ZnO layers deposited on 6H-SiC J. Appl. Phys. 100 (2006) 63523 A. Ashrafi Strain effects in ZnO layers deposited on 6H-SiC J. Appl. Phys. 100 (2006) 63523 A. Ashrafi, Y. Segawa Nucleation and growth kinetics of II-O epitaxial layers deposited on 6H-SiC substrates Current Appl. Phys. 6 (2006) 363 A. Ashrafi Nucleation and interface chemistry of ZnO deposited on 6H-SiC Phys. Rev. B 72 (2005) 155302 A. Ashrafi Determination of Mg composition in MgxZn1-xO alloys: validity of Vegard’s law J. Vac. Sci. Technol. B 23 (2005) 2030 A. Ashrafi, Y. Segawa Nucleation and growth modes of ZnO deposited on 6H-SiC substrates Appl. Surf. Sci. 249 (2005) 139 A. Ashrafi, Y. Segawa Biaxial strain effect in exciton resonance energies of epitaxial ZnO layers grown on 6H-SiC substrates J. Cryst. Growth 275 (2005) e2439 A. Ashrafi Temperature-dependent photoluminescence of ZnO layers grown on 6H-SiC J. Appl. Phys. 95 (2004) 7738 A. Ashrafi, B. Zhang, N. T. Binh, K. Wakatsuku, Y. Segawa High quality ZnO layers grown on 6H-SiC substrates by metalorganic chemical-vapor deposition Jpn. J. Appl. Phys. Part 1 43 (2004) 1114 A. Ashrafi, Y. Segawa Strain relaxation and its effect on exciton resonance energies of epitaxial ZnO layers grown on 6H-SiC substrates Appl. Phys. Lett. 84 (2004) 2814 A. Ashrafi, I. Suemune, H. Kumano, S. Tanaka Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted molecular-beam epitaxy Jpn. J. Appl. Phys. Part 2 41 (2002) L1281 A. Ashrafi, H. Kumano, I. Suemune H2O-vapor-activated growth of ZnO on a-sapphire substrate with metalorganic molecular-beam epitaxy Jpn. J. Appl. Phys. Part 1 41 (2002) 2851 A. Ashrafi, H. Kumano, I. Suemune CdO epitaxial layers grown on (001) GaAs surfaces by metalorganic molecular-beam epitaxy J. Cryst. Growth 237 (2002) 518 A. Ashrafi, H. Kumano, I. Suemune Growth activation of ZnO layers with H2O vapor on a-face of sapphire substrates by metalorganic molecular-beam epitaxy Phys. Stat. Sol. (a) 192 (2002) 224 A. Ashrafi, H. Kumao, I. Suemune Single-crystalline rocksalt CdO layers grown on GaAs(001) substrates by metalorganic molecular-beam epitaxy Appl. Phys. Lett. 79 (2001) 470 A. Ashrafi Growth and characterization of hypothetical zincblende ZnO on GaAs substrates by metalorganic molecular-beam epitaxy Appl. Phys. Lett. 76 (2000) 550 A. Ashrafi, A. Ueta, A. Avramescu, H. Kumano, I. Suemune Role of ZnS buffer layers in growth of zincblende ZnO on GaAs substrates by metalorganic molecular-beam epitaxy J. Cryst. Growth 221 (2000) 435 G. de M. Azevedo, C. J. Glover, M.C. Ridgway, K. M. Yu, G. J. Foran Direct evidence of defect annihilation during structural relaxation of amorphous InP Physical Review B 68 (2003) 115204/1-6 G. de M. Azevedo, C. J. Glover, K.M. Yu, G.J. Foran, M.C. Ridgway Direct observation of structural relaxation in amorphous compound semiconductors Nuclear Instruments and Methods in Physics Research B 206 (2003) 1024-1027 G. de M. Azevedo, M.C. Ridgway, J. Betlehem, K.M. Yu, C. J. Glover, G.J. Foran EXAFS measurements of metal-decorated nanocavities in Si Nuclear Instruments and Methods in Physics Research B 199 (2003) 179-184 G.M. Azevedo, M.C. Ridgway, K.M. Yu, C. J. Glover, G.J. Foran Structural Characterization of Amorphised InAs with Synchrotron Radiation Nuclear Instruments and Methods in Physics Research B 190 (2002) 851-855 A. Babinski, J. Siwiec-Matuszyk, J. Baranowski, G. Li, C. Jagadish Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy Applied Physics Letters 77 (2000) 999-1001 J Baghdadi, Ahmad Safaai-Jazi, Haroldo Optical fibers with low nonlinearity and low polarization mode dispersion for terabit communications Optics and Laser Technology 33 (2001) 285-291 W.J. Bailey, H.C. Bennet-Clark, N.H. Fletcher Acoustics of a Small Australian Burrowing Cricket: The Control of Low-Frequency Pure-Tone Songs Journal of Experimental Biology 204 (2001) 2827-2841 J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J.S. Williams, M.J. Aziz, F. Capasso Point defect engineered Si sub-bandgap light-emitting diode Optics Express 15 (2007) 6727-6733 Carmem Barbosa, Rogerio Cazo, Haroldo Grating structures with symmetric fractionally organized gaps Microwave and Optical Technology Letters 31 (2001) 223-229 Carmem Barbosa, Renato Rabelo, Osni Lisboa, Haroldo Hattori, Rogerio Cazo Fabricacao e caracterizacao de grades de Bragg atraves do uso da tecnica da mascara de fase Telecomunicacoes 3 (2000) 22-26 Carmem Barbosa, Renato Rabelo, Osni Lisboa, Haroldo, Rogerio Cazo Fabricacao e caracterizacao de grades de Bragg atraves do uso da tecnica da mascara de fase Telecomunicacoes 3 (2000) 22-26 S. Barik, H. H. Tan, C. Jagadish Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots Nanotechnology 18 (2007) 175305 (4 pages) S. Barik, H. H. Tan, C. Jagadish High temperature rapid thermal annealing of phosphorous ion implanted InAs/InP quantum dots Appl. Phys. Lett. 90 (2007) 093106 S. Barik, H. H. Tan, C. Jagadish Proton implantation-induced intermixing of InAs/InP quantum dots Appl. Phys. Lett. 88 (2006) 223101 (3 pages) S. Barik, H. H. Tan, C. Jagadish, N. Vukmirovic, P. Harrison Selective wavelength tuning of self-assembled InAs quantum dots grown on InP Appl. Phys. Lett. 88 (2006) 193112 (3 pages) S. Barik, H. H. Tan, C. Jagadish Comparison of InAs quantum dots grown on InGaAsP and InP Nanotechnology 17 (2006) 1867-1870 J. Bartels, R. Vianden, M.C. Ridgway Impurity Gettering by Cavities in Si Investigated with the PAC Technique Nuclear Instruments and Methods in Physics Research B 190 (2002) 846-850 A Bell, N.H. Fletcher The cochlear amplifier as a standing wave: ‘squirting’ waves between rows of outer hair cells? Journal of the Acoustical Society of America 116 (2004) 1016-1024 V. Berbenni, A. Marini, P. Matteazzi, R. Ricceri, N.J. Welham Solid-State Formation of Lithium Ferrites from Mechanically Activated Li2C03-Fe203 Mixtures Journal of the American Ceramic Society ?? (2001) W. Berkey, R.G. Elliman, A. Balogh Heavy Ion Induced Intermixing at Ta/Si and Ta/SiO2 Interfaces Nucl. Instr. Meth. B226 (2004) 309-119 W. Berky, S. Gottschalk, R.G. Elliman, A.G. Balogh Orientation dependent ion beam mixing of Ta/Si interfaces Nucl. Instr. Meth. B249 (2006) 200-203 F. Bernardi, L.L. Araujo, M. Behar, P. L. Grande, J. F. Dias Energy-dependent He flux redistribution through the Si(100) channel Nuclear Instruments and Methods B 249 (2006) 69-72 E. W. Bogaart, J. E. M. Haverkort, T. Mano, R. Notzel, J. H. Wolter, P. Lever, H. H. Tan, C. Jagadish Picosecond time-resolved bleaching dynamics of self-assembled quantum dots IEEE Trans. On Nanotechnology 3 (2004) 348-352 M. A. Bolorizadeh, S. Ruffell, I. V. Mitchell, R. Gwilliam Quantitative depth profiling of ultra-shallow phosphorus implants in silicon using time-of-flight secondary ion mass spectrometry and the nuclear reaction 31P(α,p0)34S Nuclear Instruments and Methods in Physics Research Section B 225(3) (2004) 345-352 H. Boudinov, A.V.P. Coelho, H. H. Tan, C. Jagadish Characterization of deep level traps responsible for isolation of proton implanted GaAs Journal of Applied Physics 93 (2003) 3234-3238 H. Boudinov, J.P. de Souza, C. Jagadish Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability Nuclear Instruments and Methods in Physics B 175-177 (2001) 235-240 H. Boudinov, S.O. Kucheyev, J.S. Williams, C. Jagadish, G. Li Electrical isolation of GaN by MeV ion irradiation Applied Physics Letters 78 (2001) 943-945 H. Boudinov, H. H. Tan, C. Jagadish Electrical isolation of n-type and p-type InP layers by proton bombardment Journal of Applied Physics 89 (2001) 5343-5347 G. Boudreault, R.G. Elliman, R. Grotzschel, S.C. Gujrathi, C. Jeynes, W.N. Lennard, E. Rauhala, T. Sajavaara, H. Timmers, Y.Q. Wang, T.D.M. Weijers Round robin: measurement of H Implantation distributions in Si by elastic recoil detection Nucl. Instr. meth. B222 (2004) 547-566 Salim Boutami, Bhadise Ben Bakir, Haroldo, Xavier Letartre, Jean Louis Leclercq, Pedro Rojo-Romeo, Michel Garrigues, Christian Seassal, Pierre Viktorovitch Broadband and compact 2-D photonic crystal reflectors with controllable polarization dependence IEEE Photonics Technology Letters 18 (2006) 835-837 J.E. Bradby, J.S. Williams, M. V. Swain Pop-in events induced by spherical indentation in compound semiconductors Journal of Materials Research 19 (2004) 380 J.E. Bradby, J.S. Williams, M.V. Swain In situ characterization of phase transformations in Si during indentation Physical Review B 67 (2003) 085205-1-9 J.E. Bradby, S.O. Kucheyev, J.S. Williams, C. Jagadish, M.V. Swain, P. Munroe, M.R. Philips Contact-induced Defect Propagation in ZnO Applied Physics Letters 80 (2002) 4537-4539 J.E. Bradby, J.S. Williams, J. Wong-Leung, M.V. Swain, P. Munroe Nanoindentation-induced Deformation of Ge Applied Physics Letters 80 (2002) 2651-2653 J.E. Bradby, S.O. Kucheyev, J.S. Williams, J. Wong-Leung, M.V. Swain, P. Munroe, G. Li, M.R. Philips Indentation-induced Damage in GaN Epilayers Applied Physics Letters 80 (2002) 383-385 J.E. Bradby, J.S. Williams, J. Wong-Leung, S.O. Kucheyev, M.V. Swain, P. Munroe Spherical Indentation of Compound Semiconductors Philosphical Magazine A 82 (2002) 1931-1939 J.E. Bradby, J.S. Williams, J. Wong-Leung Mechanical Deformation in Silicon by Micro-indentation Journal of Materials Research 16 (2001) 1500-1507 J.E. Bradby, J.S. Williams, J. Wong-Leung, M.C. Swain, P. Munroe Mechanical Deformation of InP and GaAs by Spherical Indentation Applied Physics Letters 78 (2001) 3235-3237 J.E. Bradby, J.S. Williams, J. Wong-Leung, M. Swain, P. Munroe Transmission Electron Microscopy Observation of Deformation Microstructure under Spherical Indentation in Silicon Applied Physics Letters 77 (2000) 3749-3751 D.A. Brett, R. Dogra, A.P. Byrne, J. Mestnik Filho, M.C. Ridgway Pd-vacancy complex in Si identified with the perturbed angular correlation technique Physical Review B 72 (2005) 193202 D.A. Brett, R. Dogra, A.P. Byrne, M.C. Ridgway, J. Bartels, R. Vianden Local Structure of Implanted Pd in Si Using PAC Hyperfine Interactions 158 (2004) 299 D.A. Brett, G. de M. Azevedo, D.J. Llewellyn, M.C. Ridgway Gettering of Pd to Implantation-Induced Nanocavities in Si Applied Physics Letters 83 (2003) 946-947 Ma Buda, G. Iordache, S. Mokkapati, L. Fu, G. Jolley, H. H. Tan, C. Jagadish, Mi Buda Analytical expression for the quantum dot contribution to the quasi static capacitance for conduction band characterization J. Appl. Phy. 104 (2008) 023713 (11 pages) M Buda, G Iordache, Mokkapati, H. H. Tan, C. Jagadish, V Stancu, T Botila Capacitance spectroscopy study of InGaAs/GaAs quantum dot structures Journal of optoelectronics and advanced materials 10 (2008) 323-326 M. Buda, J. Hay, H. H. Tan, C. Jagadish Thin clad diode laser US Patent (2006) No. 6, 993, 053 M. Buda, H. H. Tan, M. Aggett, C. Jagadish Low divergence diode laser US Patent US Patent (2005) No. 6, 882, 670 M. Buda, C. Jagadish Computation of the modal reflectivity for a partially etched mirror: application for integration of a laser diode and a waveguide Appl. Optics 44 (2005) 1039-1050 M. Buda, J Hay, H. H. Tan, J. Wong-Leung, C. Jagadish Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design IEEE Journal of Quantum Electronics 39 (2003) 625-633 M. Buda, J. Hay, H. H. Tan, L. Fu, C. Jagadish, P. Reece, M. Gal Effects of Zn doping on intermixing in InGaAs/AIGaAs laser diode structures Journal of The Electrochemical Society 150 (2003) G481-G487 M. Buda, H. H. Tan, L. Fu, L. Josyula, C. Jagadish Improvement of the kink-free operation in ridge-waveguide laser diodes due to coupling of the optical field to the metal layers outside the ridge IEEE Photonics Technology Letters 15 (2003) 1686-1688 Burgess, M. Ferry Nanoindentation of metallic glasses Materials Today 12 (2009) 24-32 Burgess, C. Jagadish Nanoscale Materials: How Small is Big Proceedings of the IEEE 96 (2008) 1895-1897 Burgess, K. Laws, M. Ferry Effect of loading rate on the serrated flow of a bulk metallic glass during nanoindentation Acta Materialia 56 (2008) 4829-4835 K.S.A. Butcher, T.L. Tansley, N. Brack, P.J. Pigram, H. Timmers, K.E. Prince, R.G. Elliman Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions Appl. Surf. Sci. 230 (2004) 18-23 K.S.A. Butcher, M. Wintrebert-Fouquet, P.P.-T. Chen, T.L. Tansley, H. Dou, S.K. Shrestha, H. Timmers, M. Kuball, K.E. Prince, J.E. Bradby Nitrogen-Rich Indium Nitride Journal of Applied Physics 95 (2004) 6124 K.S.A Butcher, H. Timmers, A. Chen, P.P-T. Chen, T.D.M. Weijers, E.M. Goldys, T.L. Tansley, R. G. Elliman, J.A. Freitas Jr Crystal Size and Oxygen Segregation for Polycrystalline GaN Journal of Applied Physics 92 (2002) 3397-3403 C. Carmody, H. H. Tan, C. Jagadish, O. Douheret, K. Makaya, S. Anand, J. Zou, L. Dao, M. Gal Structural, electrical and optical analysis of ion implanted semi-insulating InP J. Appl. Phys. 95 (2004) 477-482 C. Carmody, H. H. Tan, C. Jagadish, A. Gaarder, S. Marcinkevicius Ultrafast carrier trapping and recombination in highly resistive ion implanted InP J. Appl. Phys. 94 (2003) 1074-0178 C. Carmody, H. H. Tan, C. Jagadish, A. Gaarder, S. Marcinkevicius Ion implanted InGaAs for ultrafast optoelectronic aplications Appl. Phys. Lett. 82 (2003) 3913-15 C. Carmody, H. H. Tan, C. Jagadish Electrical isolation of n- and p-In 0.53Ga0.47As epilayers using ion irradiation Journal of Applied Physics 94 (2003) 6616-6620 C. Carmody, H. H. Tan, C. Jagadish Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quamtum wells Journal of Applied Physics 93 (2003) 4468-4470 C. Carmody, H. Boudinov, H. H. Tan, C. Jagadish, M.J. Lederer, V. Kolev, B. Luther-Davies, L.V. Dao, M. Gal Ultrafast Trapping Times in Ion Implanted InP Journal of Applied Physics 92 (2002) 2420-2423 E. Castro-Camus, L. Fu, J. Lloyd-Hughes, H. H. Tan, C. Jagadish, M.B. Johnston Photoconductive response correction for detectors of terahertz radiation J. Appl. Phys. 104 (2008) 053113 (7 pages) E. Castro-Camus, J. Lloyd-Hughes, L. Fu, H. H. Tan, C. Jagadish, M.B. Johnston An ion-implanted InP receiver for polarization resolved terahertz spectroscopy Optics Express 15 (2007) 7047-7057 E. Castro-Camus, J. Lloyd-Hughes, M. B. Johnston, M.D. Fraser, H. H. Tan, C. Jagadish Polarization-sensitive terahertz detection by multicontact photoconductive receivers Appl. Phys. Lett. 86 (2005) 254102 Rogerio Cazo, Carmem Barbosa, Haroldo, Vitor Schneider Steady-state analysis of a directional square lattice band-edge photonic crystal laser Microwave and Optical Technology Letters 46 (2005) 210-214 Rogerio Cazo, Osni Lisboa, Haroldo, Vitor Schneider, Carmem Barbosa, Renato Rabelo, Jorge Ferreira Experimental analysis of reflected modes in a multimode strained grating Microwave and Optical Technology Letters 28 (2001) 4-8 Rogerio Cazo, Haroldo, Carmem Barbosa, Osni Lisboa, Renato Rabelo Sensor de deformacao usando grades de Bragg Telecomunicacoes 3 (2000) 76-79 L.T. Chadderton, Y. Chen A Model for the Growth of Bamboo and Skeletal Nanotubes: Catalytic Capillarity Journal of Crystal Growth 240 (2002) 164-169 Y. Q. Chang, X. H. Chen, H.Z. Zhang, W. J. Qiang, Y. Long Field emission from randomly oriented ZnO nanowires J. Vac. Sci. Technol. B 25(4) (2007) 1249(4 pages) Y. Q. Chang, D. P. Yu, H.Z. Zhang, Z. Wang, Y. Long, W. J. Qiang Fabrication and characterization of single-crystalline nanostructured Zn1-xMnxS Nanotechnology 17 (2006) 1999-2003 Y. Q. Chang, Y. N. Wu, M. W. Wang, H.Z. Zhang, D. P. Yu, Z. Wang, Y. Long, R. C. Ye Fabrication and characterization of windmill Zn1−xCoxO structures for transparent spintronics Journal of Crystal Growth 289 (2006) 183-187 Y. Q. Chang, H.Z. Zhang, Y. Long, R. C. Ye Fabrication and Characterization of Well-Aligned Zn1-xMnxO Nanorods Chinese Phys. Lett. 23 (2006) 716-719 Y.Q. Chang, D.P. Yu, Z. Wang, Y. Long, H.Z. Zhang, R.C. Ye Fabrication and abnormal magnetic properties of MnO nanoparticles via vapor phase growth Journal of Crystal Growth 281 (2005) 678-682 I. H Chang, Kim, J. S. Song, S.-H. Choi Photoinduced Increasing or Decreasing Behaviours of Photoluminescence in Phenylene Vinylene Polymer Derivatives J. Kor. Phys. Soc. 45 (2004) 505 S. Charnvanichborikarn, M.J. Conway, J. Wong-Leung, J.S. Williams Achieving a narrow size distribution of Au particles at a precise depth in SiO2 by segregation of Au precipitates Nanotechnology 20 (2009) 185603 H. Chen, H.Z. Zhang, Y. Chen, Y. Liu, C.P. Li, J.S. Williams Cathodoluminescence of Boron Nitride Nanotubes Doped by Europium Journal of the Australian Ceramic Society 44 (2008) 68-70 H. Chen, Y. Chen, Y Liu, L. Fu, C Huang, D. Llewellyn Over 1.0 mm-long boron nitride nanotubes Chemical Physics Letters 463 (2008) 130-133 H. Chen, H.Z. Zhang, L. Fu, Y. Chen, J.S. Williams, C. Yu, D.P. yu Nano Au-decorated boron nitride nanotubes: Conductance modification and field-emission enhancement Applied Physics Letters 92 (2008) 243105-7 H. Chen, Y. Chen, Yun Liu, Hongzhou Zhang, Chi Pui Li, Zhongwen Liu, Simon P Ringer, J.S. Williams Rare-earth doped boron nitride nanotubes Materials Science and Engineering: B 146 (2008) 189-192 H. Chen, Y. Chen, C. P. Li, H.Z. Zhang, J.S. Williams, Y Liu, Z Liu, S P Ringer Eu-doped Boron Nitride Nanotubes as a Nanometer-Sized Visible-Light Source Advanced Materials 19 (2007) 1845-1848 H. Chen, Y. Chen, Yun Liu, Chaonan Xu, J.S. Williams Light emission and excitonic effect of boron nitride nanotubes observed by photoluminescence spectra Optical Materials 29 (2007) 1295-1298 Y. Chen, H. Chen, J. Yu, J.S. Williams, V Craig Focused ion beam milling as a universal template technique for patterned growth of carbon nanotubes Applied Physics Letters 90 (2007) 093126 Y. Chen, C. P. Li, H. Chen, Y.J. Chen One-dimensional nanomaterials synthesized using high-energy ball milling and annealing process Science and Technology of Advanced materials 7 (2006) 839-847 Yongjun Chen, Bo Chi, Denise.C Mahon, Y. Chen An effective approach to grow boron nitride nanowires directly on stainless-steel substrates Nanotechnology 17 (2006) 2942-2946 Yongjun Chen, Bo Chi, Qiuxiang Liu, Denise.C Mahon, Y. Chen Fluoride-assisted synthesis of mullite (Al5.65Si0.35O9.175) nanowires Chemical Communications (2006) 2780-2782. Yongjun Chen, Bo Chi, H.Z. Zhang, H. Chen, Y. Chen Controlled growth of zinc nanowires Materials Letters. 61 (2007) 144-147. Yongjun Chen, H.Z. Zhang, Y. Chen Pure boron nitride nanowires produced from boron triiodide Nanotechnology 17 (2006) 786-789 H. Chen, Y. Chen, J. Yu, J.S. Williams Purification of boron nitride nanotubes Chemical Physics Letters 425 (2006) 315-319 Y. Chen, J. Yu Patterned Growth of carbon nanotubes on Si substrates without predeposition of metal catalysts Applied Pjysics letters 87 (2005) 033103 Y. Chen, M.J. Conway, J. D. Fitzgerald Carbon nanotubes formed in graphite after mechanical grinding and thermal annealing Appl. Phys. A 76 (2003) 633-636 Y. Chen, M.J. Conway, J.S. Williams, J. Zou Large-quantity Production of High-yield Boron Nitride Nanotubes Journal of Materials Research 17 (2002) 1896-1899 Y. Chen, L. Chadderson, J.S. Williams, J, Fitz Gerald Solid-State Formation of Carbon and Boron Nitride Nanotubes Materials Science Forum 343-346 (2000) 63-67 A. Cheung, G. de M. Azevedo, C. J. Glover, D. Llewellyn, R.G. Elliman, G.J. Foran, M.C. Ridgway Structural perturbation within Ge nanocrystals in silica Applied Physics Letters 84 (2004) 278-280 S. Cheylan, R.G. Elliman Photoluminescence from Si Nanocrystals in Silica: The Effect of Hydrogen Nuclear Instruments and Methods in Physics Research B 175-177 (2001) 422-425 S. Cheylan, R.G. Elliman The effect of hydrogen on the photoluminescence of Si nanocrystals embedded in a SiO2 matrix Applied Physics Letters 78 (2001) 1225-1227 S. Cheylan, R.G. Elliman, K. Gaff, A. Durandet Luminescence from Si Nanocrystals in Silica Deposited by Helicon Activated Reactive Evaporation Applied Physics Letters 78 (2001) 1670-1672 S. Cheylan, R.G. Elliman Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO2 Applied Physics Letters 78 (2001) 1912-1924 S. Cheylan, N. Langford, R.G. Elliman The Effect of Ion-Irradiation and Annealing on the Luminescence of Si Nanocrystals in SiO2 Nuclear Instruments and Methods in Physics Research B 166-167 (2000) 851-856 H.J. Cho, J.H. Yoon, R.G. Elliman, A.R. Wilkinson Saturation of Photoluminescence Intensity from Si Nanocrystals Exposed to Atomic Hydrogen J. Korean Phys. Soc. 54 (2009) 736-739 S. Choi, R.G. Elliman, S. Cheylan, J. Martin Intrinsic Defect-Related Blue-Violet and Ultraviolet Photoluminescence from Si+-Implanted Fused Silica Applied Physics Letters 76 (2000) 2062-2064 C. Cima, H. Boudinov, J. de Souza, Y. Suprun-Belevich, P. Fichtner Strain Development and Damage Accumulation During Neon Ion Implantation into Silicon at Elevated Temperatures Journal of Applied Physics 88 (2000) 1771-1775 A. V. P. Coelho, H. Boudinov, T.v. Lippen, H. H. Tan, C. Jagadish Impant isolation of AlGaAs multilayer DBR Nucl. Instrum. Meth. B 218 (2004) 381-385 M. I. Cohen, C. Jagadish It's all about speed IEEE Circuits and Devices 20 (2004) 38-43 M.I. Cohen, A.A. Allerman, K.D. Choquette, C. Jagadish Electrically steerable lasers using wide aperture VCSELs IEEE Photonics Technology Letters 13 (2001) 544-546 V.A. Coleman, J.E. Bradby, C. Jagadish, M.R. Phillips Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO Appl. Phys. Lett. 89 (2006) 082102(3 pages) V.A. Coleman, M. Buda, H. H. Tan, C. Jagadish, M. R. Phillips, K. Koike, S. Sasa, M. Inoue, M. Yano Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing Semicond. Sci. Technol. 21 (2006) L25 - L28 V.A. Coleman, H. H. Tan, C. Jagadish, S. O. Kucheyev, J. Zou Thermal stability of ion implanted ZnO App. Phys. Lett. 87 (2005) 231912 V.A. Coleman, J.E. Bradby, C. Jagadish, P. Munroe, Y. W. 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Jagadish A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells Journal of Applied Physics 88 (2000) 5252-5254 L. Dao, M. Gal, G. Li, C. Jagadish Photoluminescence in delta-doped InGaAs/GaAs single quantum wells Journal of Applied Physics 87 (2000) 3896-3899 L.V. Dao, M. Gal, G. Li, C. Jagadish The influence of deltadoped sheet position on the optical properties of InGaAs/GaAs single quantum wells Proceedings of 2000 International Semiconducting and Insulating Materials Conference Canberra, Australia (2000) 3-7 July 2000 G. Davies, R. Harding, T. Jin, A. Mainwood, J. Wong-Leung Optical Studies of Ion-Implantation Centres in Silicon Nuclear Instruments and Methods in Physics Research B 186 (2002) 1-9 J.A. Davis, C. Jagadish Ultrafast spectroscopy of ZnO/ZnMgO quantum wells Laser and Photonics Reviews 3 (2009) 85-96 J.A. Davis, L.V. Dao, X. Wen, C. Ticknor, P. Hannaford, V.A. Coleman, H. H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, M. 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Deenapanray Trap-Limited Migration of Vacancy-Type Defects in 7.5 keV H--Implanted Si Applied Physics Letters 80 (2002) 1577-1579 P.N.K. Deenapanray Dynamics of the Ion Beam Induced Nitridation of Silicon Journal of Vacuum Science and Technology A 20 (2002) 1261-1269 P.N.K. Deenapanray, A. Martin, P. Lever, C. Jagadish On the Pulsed Anodic Oxidation of n+-InP Electrochemical and Solid-State Letters 5 (2002) G41-G44 P.N.K. Deenapanray, C. Jagadish Effect of stress on impurity-free quantum well intermixing Electrochemical and Solid State Letters 4 (2001) G11-G13 P.N.K. Deenapanray, C. Jagadish Impurity free intermixing of GaAs/AlGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate Journal of Vacuum Science & Technology B 19 (2001) 1962-1966 P.N.K. Deenapanray, A. Martin, C. Jagadish Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers Applied Physics Letters 79 (2001) 2561-2563 P.N.K. Deenapanray, M. 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Desnica, M.C. Ridgway, C. J. Glover Structural Modifications in Amorphous Ge Produced by Ion Implantation Nuclear Instruments and Methods in Physics Research B 178 (2001) 192-195 R Dogra, A.P. Byrne, Z.S. Hussain, M.C. Ridgway Atomic scale characterization of ion-induced amorphization of GaAs and InAs using perturbed angular correlation spectroscopy Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Article in Press (2008) R Dogra, Z.S. Hussain, A.K. Sharma Characterization of radiation damage annealing of recoil-implanted GaP Materials Characterization 58 (2007) 652-657 R. Dogra, A. P. Byrne, L.L. Araujo, M.C. Ridgway Room temperature relaxation of irradiated InP, GaAs and InAs characterized with the perturbed angular correlation technique Nuclear Instruments and Methods B 257 (2007) 355-358 R. Dogra, D.A. Brett, A.P. Byrne, J. Mestinik Filho, Y. Li, M.C. Ridgway Do palladium–dopant pairs exist in silicon? 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Luther-Davies Linear optical properties of Ge nanocrystals in silica Applied Physics Letters 79 (2001) 2327-2329 Emmanuel Drouard, Haroldo, Christian Grillet, Andrezj Kazmierczak, Xavier Letartre, Pedro Rojo-Romeo, Pierre Viktorovitch Directional channel-drop filter based on a slow Bloch mode photonic crystal waveguide section Optics Express 13 (2005) 3037-3048 K. Drozdowicz-Tomsia, E.M. Goldys, L. Fu, C. Jagadish Doping effect on dark currents in In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition Appl. Phys. Lett. 89 (2006) 113510 AJ Du, Y. Chen, GQ Lu, SC Smith Half metallicty in finite-length zigzag single walled carbon nanotubes: a first-principle prediction Applied Physics Letters 93 (2008) 073101 K. E.Ip, M. Overberg, Y.W. Heo, D.P. Norton, S.J. Pearton, S.O. Kucheyev, C. Jagadish, J.S. Williams, R.G. Wilson, J.M. Zavada Thermal Stability of Ion-implanted Hydrogen in ZnO Applied Physics Letters 81 (2002) 3996-3998 L.A. Edelman, R.G. Elliman, L. Rubin, L. Washington, K.S. Jones Effect of low Ge content on B diffusion in amorphous SiGe alloys JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 26 (2008) 333-337 L.A. Edelman, S. Jin, K.S. Jones, R.G. Elliman, L.M. Rubin Effect of carbon co-doping on boron diffusion in amorphous silicon Appl. Phys. Lett. 93 (2008) 072107 L.A. Edelman, M.S. Phen, K.S. Jones, R.G. Elliman, L.M. Rubin Boron diffusion in amorphous silicon-germanium alloys Appl. Phys. Lett. 92 (2008) 104304 R.G. Elliman, A.R. Wilkinson, T. Kim, P.K. Sekhar, S. Bhansali Optical emission from erbium-doped silica nanowires Journal of Applied Physics 103 (2008) 104304 R.G. Elliman, A.R. Wilkinson, T. Kim, P Sekhar, S Bhansali Ion beam synthesis and doping of photonic nanostructures Nucl. Instr. Meth. B266 (2008) 1362-1366 R.G. Elliman, A.R. Wilkinson, T.-H Kim, P. Sekhar, S. Bhansali Optical emission from erbium-doped silica nanowires J. Appl. Phys. 103 (2008) 104304 R.G. Elliman, M Spooner, T.D.M Dall, T. Kim, N.H. Fletcher Oscillating cracks in glassy films on silicon substrates Phil. Mag. 87 (2007) 4893-4906 R.G. Elliman, M Forcales, A.R. Wilkinson, NJ Smith Waveguiding properties of Er-implanted silicon-rich oxides Nucl. Instrum. Methods B 257 (2007) 11-14 R.G. Elliman, T.D.M. Dall, MG Spooner, T. Kim, A.R. Wilkinson, S Huth, V Tobias Novel crack propagation in PECVD-deposited dielectric thin films Nucl. Instrum. Methods B 257 (2007) 554-557 R.G. Elliman, T.D.M. Dall, M. Spooner, T. Kim, A.R. Wilkinson Stress relief in thin films - the role of hydrogen Nucl. Instrum. Methods B 249 (2006) 310-313 R.G. Elliman, A.R. Wilkinson, N.J. Smith, M. Spooner, T.D.M. Dall (nee Weijers), M.J. Lederer, B. Luther-Davies, M. Samoc Light emission from silicon nanocrystals –size does matter! J. Korean Phys. Soc. 45 (2004) s656-s660 R.G. Elliman, H. Timmers, T.D.M. Weijers Hydrogen detection with a gas ionization elastic recoil detector Nucl. Instr. Meth. B219-220 (2004) 680-685 R.G. Elliman, M.J. 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Conway Nanotube growth during annealing of mechanically milled Boron Applied Physics A 76 (2003) 107-110 N.H. Fletcher, R.G. Elliman, T. Kim Bead-strings in silica nanowires: A simple diffusion model Nanotechnology 20 (2009) 085613 N.H. Fletcher Gravitational oscillators: Bouncing balls, rocking beams, and spinning discs Acoustics Australia 35 (2007) 87-90 N.H. Fletcher Animal Bioacoustics Springer handbook of Acoustics (New York, springer- (2007) Chapter 19, pp. 785 N.H. Fletcher Anomalous solutions to simple wave equations Acoustics Australia 35 (2007) 41-43 N.H. Fletcher What makes a good recorder? Recorders based on historical models; Fred Morgan, Writings and Memories (Fulda, Germany, Mol (2007) 112-113 N.H. Fletcher, L.C.L. Hollenberg, J. Smith, A.Z. Tarnopolsky, J. Wolfe Vocal tract resonances and the sound of the Australian didjeridu (yidaki): II. Theory Journal of the Acoustical Society of America 119 (2006) 1205-1213 N.H. Fletcher, T. Riede, R.A. 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Phys. 100 (2006) 014902-1-3 Marcos Franco, Elaine Barreto, Valdir Serrao, Francisco Sircilli, Haroldo Analysis of highly birefringent photonic crystal fibers with squeezed rectangular lattices Microwave and Optical Technology Letters 50 (2008) 1083-1086 L. Fu, Q. Li, Kuffner, G. Jolley, P. Gareso, H. H. Tan, C. Jagadish Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion Appl. Phys. Lett. 93 (2008) 013504 (3 pages) L. Fu, H. H. Tan, McKerracher, J. Wong-Leung, C. Jagadish, N. Vukmirovic, P. Harrison Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors J. Appl. Phys. 99 (2006) 114517 (8 pages) L. Fu, P. Lever, K. Sears, H. H. Tan, C. Jagadish In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition IEEE Electron Device Letters 26 (2005) 628-630 L. Fu, H. H. Tan, C. Jagadish Method of disordering quantum well heterostructures US Patent (2005) No. 6, 936, 526 L. Fu, P. Lever, H. H. Tan, C. Jagadish, M. Gal, P. Reece Study of intermixing in InGaAs/(Al)GaAs quantum well and quantum dot structures for optoelectronic/photonic integration IEE Proc., Circuits Devices Syst. 152 (2005) 491-496 L. Fu, P. Lever, H. H. Tan, C. Jagadish, P Reece, M Gal Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide Appl. Phys. Lett. 82 (2003) 2613 L. Fu, J. Wong-Leung, P.N.K. Deenapanray, H. H. Tan, C. Jagadish, B. Gong, R.N. Lamb, R.M. Cohen, W. Reichert, L.V. Dao, M. Gal Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide Journal of Applied Physics 92 (2002) 3579-3583 L. Fu, R.W.v.d Heijden, H. H. Tan, C. Jagadish, L.V. Dao, M. Gal Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Doped Spin-on Silica Layers Appl. Phys. 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Cockayne Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire Physical Review B 61 (2000) 8306-8311 N. Fujiasawa, S. Ruffell, J.E. Bradby, J.S. Williams, B. Haberl, O. L. Warren Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions Journal of Applied Physics 105 (2009) 106111 K. Gaff, A. Durandet, T.D.M. Weijers, J. Love, R. Boswell Strong photosensitivity in tin-doped silica films IEEE Signal Processing Letters 36 (2000) 842-843 M. Gal, L.V. Dao, E. Kraft, M.B. Johnston, C. Carmody, H. H. Tan, C. Jagadish Thermally Stimulated Luminescence in Ion-Implanted GaAs Journal of Luminescence 96 (2002) 287-293 M. Gal, M.C. Wengler, S. Ilyas, I. Rofii, H. H. Tan, C. Jagadish Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler Nuclear Instruments and Methods in Physics Research B 173 (2001) 528-532 Q. Gao, M. Buda, H. H. Tan, C. 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Wang, Y. Kim, H.J. Joyce, Q. Gao, H. H. Tan, C. Jagadish H.J. Joyce, Q.Gao, H.H. Tan and C. Jagadish, Evolution of epitaxial InAs nanowires grown on GaAs (111)B by MOCVD Small 5 (2009) 366-369 H.Z. Zhang, R. M. Wang, L. P. You, J. Yu, H. Chen, D P Yu, Y. Chen Boron carbide nanowires with uniform CNx coatings New Journal of Physics 9 (2007) 13 (9 pages) H.Z. Zhang, Q. Zhao, J. Yu, D. P. Yu, Y. Chen Field emission characteristics of conical boron nitride nanorods Journal of Physics D: Applied Physics 40 (2007) 144-147 H.Z. Zhang, J. D. Fitz Gerald, L. T. Chadderton, J. Yu, Y. Chen Growth and structure of prismatic boron nitride nanorods Physical Review B 74(1) (2006) 045407(9 pages) H.Z. Zhang, M. Phillips, J. Fitz Gerald, J. Yu, Y. Chen Patterned Growth and Cathodoluminescence of Conical Boron Nitride Nanorods Appl. Phys. Lett. 88 (2006) 093117 H.Z. Zhang, J. Fitz Gerald, J. Yu, Y. Chen Conical Boron Nitride Nanorods Synthesized Via the Ball-Milling and Annealing Method Journal of the American Ceramic Society 89 (2006) 675-679 C. Zhao, Y.H. Chen, M. Zhao, C.L. Zhang, B. Xu, L.K. Yu, J. Sun, W. Lei, Z.G. Wang Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth Materials Science in Semiconductor Processing 9 (2006) 31 C. Zhao, Y.H. Chen, C.X. Cui, B. Xu, L.K. Yu, W. Lei, J. Sun, Z.G. Wang Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate Solid State Communications 137 (2006) 630 C. Zhao, Y.H. Chen, C.X. Cui, J. Sun, W. Lei, L.K. Yu, K. Li, Z.G. Wang Quantum dot growth simulation of periodic stress of substrate Journal of Chemical Physics 123 (2005) 094708 Q. T. Zhao, P. Kluth, H. L. Bay, St. Lenk, S. Mantl Nanopatterning of epitaxial CoSi2 using oxidation in a local stress field and fabrication of nanometer metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 96 (2004) 5775-5780 Q. Zhao, M. Willander, W. Lu, X. Liu, S. Shen, H. H. Tan, C. Jagadish, J. Zou, D. Cockayne Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires Journal of Applied Physics 88 (2000) 2519-2511 X.F. Zhu, J.S. Williams, M.J. Conway, M.C. Ridgway, F. Fortuna, M.-O. Ruault, H. Bernas Direct Observation of Irradiation-Induced Nanocavity Shrinkage in Si Applied Physics Letters 79 (2001) 3416-3418 J. Zou, M. Paladugu, Y.N. Guo, Y. Kim, Q. Gao, H.J. Joyce, H. H. Tan, C. Jagadish Growth Mechanism of Truncated Triangular III-V Nanowires Small 3 (2007) 389-393 A. Zubiaga, F. Tuomisto, V.A. Coleman, H. H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, M. Yano Mechanisms of electrical isolation in O+ irradiated ZnO Phys. Rev. B 78 (2008) 035125 ( 5 pages) A. Zubiaga, F. Tuomisto, V.A. Coleman, C. Jagadish Positron study of ion implantation ZnO Appl. Surf. Sci. 255 (2008) 234-236 Books and Book Chapters A. Ashrafi ZnO Nanostructures: Synthesis and Properties in Metal Oxide Nanostructures and Their Applications, Ed. , American Scientific Publishers (2008) Vol. 5, p1-29 Y. Chen, J.S. Williams Synthesis of Boron Nitride Nanotubes Using a Ball Milling and Annealing Method in Nanoengineering of structural, functional, and smart materials, Ed. Mark J. Schultz, CRC Press (2006) 169-198 Y. Chen Solid state formation of carbon nanotubes in Carbon Nanotechnology, Ed. Dai, Elsevier (2006) Y. Chen New Synthesis Method of Carbon and Boron Nitride Nanotubes:mechano-Thermal Process in Advances in Nanoscience & Nanotechnology, Ed. Ashutosh Sharma, Council of Scientific and Industrial Research (2004) 253 J.C. Chiao, A.S. Dzurak, C. Jagadish, A.S. Thiel Device and Process Technologies for Microelectronics, MEMS and Photonics IV SPIE - The International Society for Optical Engineering (2006) pp. 568 V.A. Coleman, C. Jagadish Basic Properties and Applications of ZnO in Zinc Oxide Bulk, Thin films, Nanostructure: Processing, Properties and Applications, Ed. C. Jagadish and S.J. Pearton, Elsevier, Oxford (2006) pp. 1-20 G. Comtet, G. Dujardin, G. Hellner, M. Petravic Photon Induced Fabrication of Atomic Scale Structures on Surfaces in Photonic, Electronic and Atomic Collisions, Ed. , Rinton Press (2002) 92-100 R.G. Elliman Irradiation Effects in Semiconductors in Encyclopeadia of Materials Science and Technology, Ed. , Elsevier Science (2001) N.H. Fletcher Brief Candles (Short Stories) N.H. Fletcher (2005) 88 pp. N.H. Fletcher Overtones in Encyclopedia of Nonlinear Science, Ed. A. Scott, Routledge (New York & London) (2005) 676-678 N.H. Fletcher Science education for the twenty-first century in Education and the Ideal, Ed. N. Smith, New Frontier Publishing (Sydney) (2004) 151-173 N.H. Fletcher, C.A. Sholl An Informal History of Physics at the University of new England, 1938-2001 University of New England (2003) 150 pp. N.H. Fletcher, T.D. Rossing The Physics of Musical Instruments (2nd ed.) Springer-Verlag, New York (1998) 756 pp. N.H. Fletcher Acoustic Systems in Biology Oxford University Press, New York (1992) 333 pp. N.H. Fletcher The Chemical Physics of Ice Cambridge University Press, Cambridge (1970) 271 pp. N.H. Fletcher The Physics of Rainclouds Cambridge University Press, Cambridge (1962) 286 pp. C. Jagadish, S.J. Pearton Zinc Oxide Bulk, Thin films, Nanostructure: Processing, Properties and Applications Elsevier Ltd, Oxford (2006) pp 589 C. Jagadish, D.G. Deppe, S Noda, D.G. Krauss, O. Painter Nanotechnologies for Communications: IEEE Journal on Selected Areas in Communications Special Issue IEEE (2005) 1305-1432 C. Jagadish, K.D. Choquette, B.D. Nener, K.D. Nugent Photonics: Design, Technology and Packaging SPIE - The International Society for Optical Engineering (2004) pp. 416 C. Jagadish, N.J. Welham Proceedings of 2000 International Semiconducting and Insulating Materials Conference in SIMC 2000, Ed. , IEEE, Piscataway, NJ (2000) 360 S.O. Kucheyev, C. Jagadish Ion implantation into ZnO in Zinc Oxide Bulk,Thin Films and Nanostructures: Processing, Properties and Applications, Ed. C. Jagadish and S.J. Pearton, Elsevier Ltd, Oxford (2006) pp285-312 W. Lei, Y.H. Chen, Z.G. Wang Ordering of self-assembled quantum wires on InP (001) surfaces in One-Dimensional Nanostructures, Ed. Zhiming M. Wang, Springer London, Limited (2008) W. Lei, Y.H. Chen, Z.G. Wang Ordering of self-assembled quantum wires on InP (001) surfaces in One-Dimensional Nanostructures, Ed. Zhiming M. Wang, Springer London, Limited (2008) J Linnros, T Gregorkiewicz, R.G. Elliman, T Kimmerling Silicon-Based Photonics published in J. Luminescence, Elsevier (2006) X.Q. Liu, X.L. Wang, C. Jagadish, X.L. Ogura Semiconductor Quantum Wires in Encyclopedia of Nanoscience and Nanotechnology, vol. IX, Ed. H.S. Nalwa, American Scientific Publishers (2004) 763-773 T.D. Rossing, N.H. Fletcher Principles of Vibration and Sound (second edn) Springer-Verlag, New York (2004) 330 pp. K Sears, Mokkapati, H. H. Tan, C. Jagadish In(Ga)As/GaAs quantum dots grown by MOCVD for opto-electronic device applications in Self-assembled quantum dots, Ed. Zhiming M. Wang, Springer (2007) 359-403 B.D. Weaver, M.O. Manasreh, C. Jagadish, M.O. Zollner Progress in Semiconductors II - Electronic and Optoelectronic Applications Materials Research Society (2003) pp 680 H.Z. Zhang, Y. Chen Boron Nitride Nanotubes: Synthesis and Structure in Nanomaterials Handbook, Ed. Yury Gogotsi, CRC Press (2006) 337-359 Refereed Conference Proceedings A. Afifuddin, K.S.A Butcher, T.L. Tansley, K.S.A Timmers, R.G. Elliman, T.D.M. Weijers, T.R. Ophel The Properties of GaN Films Grown by Plasma Assisted Laser-Induced Chemical Vapour Deposition, and the Influence of Heavy Ion Irradiation Proceedings of 2000 International Semiconducting and Insulating Materials Conference, Canberra, Australia, 3-7 July 2000. Institute of Electrical and Electronics Engineers Inc (2000) 51-54 L.L. Araujo, P. Kluth, G. de M. Azevedo, M.C. Ridgway Vibrational properties of Ge nanocrystals determined by EXAFS XAFS13, Stanford, USA, . AIP Conf. Proc. 882 (2007) 392 A. Ashrafi Pulsed laser deposited stoichiometric ZnO thin films IEEE as COMMAD08, Sydney, 28 Jul - 1 Aug. IEEE (2008) 8 A. Ashrafi, Y. Segawa Nucleation and growth kinetics of II-O layers deposited on 6H-SiC Advanced Materials for Nanotechnology, Queenstown, Nea Zealand, 6-11 February. (2005) A. Ashrafi, B. -P. Zhang, Y. Segawa Biaxial strain effects on exciton resonance energies of epitaxial ZnO layers grown on 6H-SiC substrates The 14th International Conference on Crystal Growth, Grenoble, France, 9-13 August. (2005) A. Ashrafi, Y. Segawa Nucleation and growth kinetics of ZnO epitaxial layers on 6H-SiC substrates The 5th International Conference on Low Dimensional Structures and Devices, Cancun, Mexico, 12-17 December. (2004) A. Ashrafi, Y. Segawa Role of strain relaxation in exciton resonance energies of ZnO epitaxial layers grown on SiC substrates American Physical Society Meeting, Montreal, Canada, 22-26 March 2004. American Physical Society (2004) A. Ashrafi, H. Kumano, I. Suemune Control of crystalline structures of ZnO and CdO layers by metalorganic molecular-beam epitaxy The 11th International Conference on II-VI Compounds, Niagra Falls, USA, 22-27 September. (2003) A. Ashrafi, H. Kumano, I. Suemune Role of stoichiometry in growth of CdO layers on GaAs substrates The 1st International Symposium on Point Defect and Nonstoichiometry, Sendai, Japan, 20-22 March. IPAP, Japan (2003) A. Ashrafi, H. Kumano, I. Suemune activation of ZnO layers with H2O vapor grown on a-Al2O3 with MOMBE The 4th International Symposium on Blue Laser and Light Emitting Diodes, Cordoba, Spain, 12-15 March. (2002) A. Ashrafi, H. Kumano, I. Suemune Phase stability of CdO on zincblende layers grown on GaAs substrates by metalorganic molecular-beam epitaxy The 28th International Symposium on Compound Semiconductors, Tokyo, Japan, 1-4 October. Institute of Physics, UK (2001) 307 A. Ashrafi, A. Ueta, H. Kumano, A. Suemune CdO thin films grown on (001)GaAs surfaces by metalorganic molecular-beam epitaxy The 13th International Conference on Crystal Growth, Kyoto, Japan, 30 July - 4 August 2001. (2001) A. Ashrafi, A. Ueta, H. Kumano, A. Suemune CdO thin films grown on (001)GaAs surfaces by metalorganic molecular-beam epitaxy The 13th International Conference on Crystal Growth, Kyoto, Japan, 30 July - 4 August. (2001) A. Ashrafi, A. Ueta, H. Kumano, A. Suemune Role of ZnS buffer layers in growth of hypothetical zincblende ZnO epilayers on GaAs substrates by MOMBE The 10th International Conference on Metalorganic Vapor Phase Epitaxy, Sapporo, Japan, 5-9 June. (2000) J. Bao, S. Charnvanichborikarn, Y. Yang, S. Tabbal, B. Shin, J. Wong-Leung, J.S. Williams, M.J. Aziz, F. Capasso Point Defect Engineered Si Sub-Bandgap Light-emitting Diodes Proc. SPIE, Vol. 6800, 68000T, Canberra, ACT, Australia, December 5. SPIE (2007) H. Boudinov, A.V.P. Coelho, J.O. de Souza Electrical Isolation of p-type GaAs Layers by Proton Bombardment Proceedings of 2000 International Semiconducting and Insulating Materials Conference, Canberra, Australia, 3-7 July 2000. Institute of Electrical and Electronics Engineers Inc (2000) 163-166 J.E. Bradby, J.S. Williams, J. Wong-Leung, J.S. Swain, P. Munroe Mechanical Deformation of Crystalline Silicon During Nanoindentation Materials Research Society Symposium Proceedings, Boston, 28-30 November 2000. Materials Research Society (2001) Q8.10.1-6 M. Buda, C. Jagadish Computation of the modal reflectivity for a partially etched mirror: application for integration of a laser diode and a waveguide COMMAD 2002 Proceedings, The University of New South Wales, Sydney, Australia, 11-13 December 2002. IEEE Institute of Electrical and Electronics Engineers (2003) 137-140 M. Buda, H. H. Tan, L. Fu, H. H. Josyula, C. Jagadish Improvement of kink-free operation in InGaAs/GaAs/AIGaAs high power, ridge waveguide laser diodes COMMAD 2002 Proceedings, The University of New South Wales, Sydney, Australia, 11-13 December 2002. IEEE Institute of Electrical and Electronics Engineers Inc (2003) 25-28 M. Buda, L. Fu, J. Hay, P. N. K. Deenapanray, H. H. Tan, C. Jagadish, P. Reece, M. Gal Impurity Free Intermixing for Optoelectronic Device Integration Integrated Optoelectronics, Philadelphia, USA, . (2002) 89-105 C. Carmody, H. H. Tan, C. Jagadish Evolution of InGaAs/InP quantum well intermixing as a function of cap layer COMMAD 2002 Proceedings, The University of New South Wales, Sydney, Australia, 11-13 December 2002. IEEE, Institute of Electrical and Electronics Engineers, Inc (2003) 491-494 C. Carmody, H. H. Tan, C. Jagadish, H. H. Zou, L. Dao, M. Gal Structural, electrical and optical properties of MEV As+ ion implanted InP COMMAD 2002 Proceedings, The University of New South Wales, Sydney, Australia, 11-13 December 2002. IEEE, Institute of Electrical and Electronics Engineers, Inc (2003) 487-490 C. Carmody, H. Boudinov, H. H. Tan, C. Jagadish, M.J. Lederer, V. Kolev, B. Luther-Davies Electrical and optical properties of MeV As and P ion implanted and annealed Indium Phosphide Proceedings of 2000 International Semiconducting and Insulating Materials Conference, Canberra, Australia, 3-7 July 2000. Institute of Electrical and Electronics Engineers Inc (2000) 137-140 S.-H Choi, Kim, S. W. Hwang, Kim, R. G. Elliman Blue-Light Emission from Crystalline Si/Silica Core/Shell Nanowires Proceedings of the 5th IEEE International Conference on Group IV Photonics, Sorrento, September 17-19. IEEE (2008) 90 S.H. Choi, S. Kim, S.W. Hwang, S. Kim, T. Kim, R.G. Elliman Blue-Light Emission from Crystalline Si/Silica Core/Shell Nanowires Proceedings of the 5th IEEE International Conference on Group IV Photonics, Sorrento, September 17-19. (2008) 90 S.-H Choi, Kim, Y. M. Park, Kim Temperature-dependent carrier recombination processes in nanocrystalline Si/SiO2multi-layers studied by time-resolved and time-integrated photoluminescence 2006 3rd IEEE International Conference on Group IV Photonics, Ottawa (Canada),, September 11. IEEE (2006) 96-98 V.A. Coleman, H. H. Tan, C. Jagadish, H. H. Kucheyev, M. R. Phillips, J. Zou Towards p-type doping of ZnO by ion implantation Mat. Res. Soc. Symp. Proc. Vol 829, Boston, USA, . Mat. Res. Soc. (2005) B8.7 V.A. Coleman, P.N.K. Deenapanray, H. H. Tan, C. Jagadish Atomic relocation of fast diffusers in impurity-free disordered P-type GaAs COMMAD 2002 Proceedings, The University of New South Wales, Sydney, Australia, 11-13 December 2002. IEEE, Institute of Electrical and Electronics Engineers, Inc (2003) 495-498 L.V. Dao, E. Kraft, M. Gal, L. Fu, C. Jagadish Thermoluminescence in GaAs Proceedings of 2000 International Semiconducting and Insulating Materials Conference, Canberra, Australia, 3-7 July 2000. Institute of Electrical and Electronics Engineers Inc (2000) 141-144 L.A. Edelman, K.S. Jones, R.G. Elliman, K.S. Rubin Boron diffusion in amorphous germanium AIP Conference Proc. 1066, , . (2008) 255 R.G. Elliman Light Emission from Silicon Nanocrystals –Size does matter! OZ NANO 03 -Proceedings of the Asia Pacific Nanotechnology Forum 2003, Cairns, . World Scientific Publishing Co (2004) 49-52 N.H. Fletcher, A Z Tarnopolsky The leaf-reed: the simplest woodwind instrument? International Symposium on Musical Acoustics, Nara, Japan, March 31 - April 3, 2004. ISMA (2004) CD-ROM N.H. Fletcher Australian Aboriginasl musical instruments: the didjeridu, the bullroarer and the gumleaf Stockholm Music Acoustics Conference SMAC-03, Stockholm, August 6 - 9. KTH Stockholm (2003) 201-204 N.H. Fletcher Acoustics of the syrinx or panpipes Eighth Western Pacific Acoustics Conference, WESPAC-VIII, Melbourne, 7-9 April 2003. (CD-ROM) (2003) Paper TB31 N.H. Fletcher, A.Z. Tarnopolsky, J. Lai Australian Aboriginal Musical Instruments — The Bullroarer Acoustics 2002, Adelaide, . (2002) 186-189 N.H. Fletcher, L. Hollenberg, J. Smith, L. Wolfe The Didjeridu and the Vocal Tract Proceedings of International Symposium on Musical Acoustics, Perugia, Italy, 10-14 September 2001. (2001) 87-90 N.H. Fletcher Nonlinearity, complexity, and the sounds of musical instruments 16th International Congress on Acoustics, Seattle, Wash., June. (1998) 2717-1720 L. Fu, P. Lever, H. H. Tan, C. Jagadish, P. Reece, M. Gal Suppression of interdiffusion in In0.5Ga0.5As/GaAs quantum dots COMMAD 2002 Proceedings, The University of New South Wales, Sydney, Australia, 11-13 December 2002. IEEE, Institute of Electrical and Electronics Engineers, Inc (2003) 503-506 M. Gal, M.C. Wengler, S. Ilyas, M.C. Rofii, H. H. Tan, C. Jagadish Measurement of the damage profile in ion implanted GaAs using an optical method Proceedings of 2000 International Semiconducting and Insulating Materials Conference, Canberra, Australia, 3-7 July 2000. Institute of Electrical and Electronics Engineers Inc (2000) 145-148 Q. Gao, M. Buda, H. H. Tan, C. Jagadish InGaAsN Quantum Dots for Long Wavelength Lasers The2006 International Conference on Nanoscience and Nanotechnology, Brisbane, 3-7 July 2006. IEEE (2006) pp. 482-485 Q. Gao, H. H. Tan, C. Jagadish, H. H. Sun, M. Gal, L. Ouyang, J. Zou Growth and characterization of GaAsN bulk layer and (In)GaAsN quantum-well structures COMMAD 2002 Proceedings, The University of New South Wales, Sydney, Australia, 11-13 December 2002. IEEE Institute of Electrical and Electronics Engineers, Inc (2003) 247-250 Q. Gao, J. Muller, P.N.K. Deenapanray, H. H. Tan, C. Jagadish Electrical isolation of p-type GaAsN epitaxial layers by ion irradiation MRS Fall Meeting, Boston, US, 2-6 Dec. (2002) 659-663 Q. Gao, H. H. Tan, C. Jagadish, P.N.K. Deenapanray Influence of isochronal annealing on the evolution of hole traps in GaAsN epilayers grown by metalorganic chemical vapor deposition 12th International Conference on Semiconducting &Insulating Materials, Smolenice, Slovania, 30 June - 5 July. IEEE Publishing Co., Piscataway, NJ, USA (2002) 80-83 P.L. Gareso, L. Fu, M. Buda, H. H. Tan, C. Jagadish Suppression of thermal atomic interdiffusion in InGaAs/AlGaAs QW laser structures Proceeding of SPIE Conference on Microelectronics, MEMS and Nanotechnology, Perth, 9-12 Dec 2003. SPIE (2004) 356-365 B. Johannessen, D. Llewellyn, P. Kluth, M.C. Ridgway Cold sample preparation for cross-sectional transmission electron microscopy: Cu nanocrystals embedded in 2 um SiO2 films. Microscopy and Microanalysis (Microsc. Microanal. 12(Supp 2)) 2006, Chicago, Illinois, USA, July 30 - August 3. Cambridge University Press (2006) 600CD Kim, S.-H Choi Luminescence properties of Si and Ge nanocrystals formed in fused silica or sapphire by ion implantation and thermal annealing International Symposium on Information Science and Electrical Engineering 2003 (ISEE 2003), Fukuoka, Japan, 13 Nonember. ISEE (2003) 303 B. -J. Kim, T. -Y. Seong, A. Ashrafi, T. -Y. Suemune Structural properties of rocksalt CdO layers grown on GaAs substrates by metalorganic molecular-beam epitaxy The 11th International Symposium on the Physics of Semiconductors and Applications, Juju, Korea, 20-23 August. (2002) A. Kinomura, J.S. Williams, J. Wong-Leung, M. Petravic, Y. Nakano, Y. Hayashi Gettering to Nanocavities in Silicon: Characterization by Neutron Activation Analysis Proceedings of the 19th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology, 13-14 December 2000. (2001) P. Kluth, B. Johannessen, L.L. Araujo, M.C. Ridgway Vibrational properties of Au and Cu nanocrystals formed by ion irradiation XAFS13, Stanford, USA, July 9-14. AIP Conf. Proc. 882 (2007) 731 S.O. Kucheyev, J.S. Williams, J. Zou, C. Jagadish, J.E. Bradby, G. Li Ion Beam Damage Processes in GaN Proceedings of the International Symposia, Washington, 25-30 March 2001. The Electrochemical Society Inc (2001) 150-160 S.O. Kucheyev, J.E. Bradby, J.S. Williams, J.E. Swain, M. Toth, M.R. Phillips, C. Jagadish Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films Materials Research Society Symposium Proceedings, Boston, 28-30 November 2000. Materials Research Society (2001) Q5.5.1-Q5.5.6 S.O. Kucheyev, J.S. Williams, C. Jagadish, J.S. Zou, M. Toth, M.R. Phillips, G. Li Ion implantation into GaN: Opportunities and problems Proceedings of 2000 International Semiconducting and Insulating Materials Conference, Canberra, Australia, 3-7 July 2000. Institute of Electrical and Electronics Engineers Inc (2000) 47-50 H. Kumano, A. Ashrafi, A. Ueta, A. Avramescu, I. Suemune Luminescence properties of ZnO thin films grown on GaAs substrates by ECR-plasma MOMBE The 9th International Conference on II-VI Compounds, Kyoto, Japan, 1-5 November. (2000) M.D.H. Lay, J.C. McCallum, G. de M. Azevedo, P.N.K. Deenapanray, C. Jagadish A deep level transient spectroscopy study of vacancy-related defect profiles in channeled ion implanted silicon COMMAD 2002 Proceedings, The University of New South Wales, Sydney, Australia, 11-13 December 2002. IEEE Institute of Electrical and Electronics Engineers, Inc (2003) 437-440 M.J. Lederer, B. Luther-Davies, H. H. Tan, C. Jagadish, C. Haiml, U. Siegner, U. Keller, J. Zou, D.J.H. Cockayne Ion-implanted GaAs for ultrafast saturable absorber applications Proceedings of 2000 International Semiconducting and Insulating Materials Conference, Canberra, Australia, 3-7 July 2000. Institute of Electrical and Electronics Engineers Inc (2000) 133-136 P. Lever, H. H. Tan, P. Reece, H. H. Gal, C. Jagadish Interdiffusion in InGaAs quantum dots by ion implantation COMMAD 2002 Proceedings, The University of New South Wales, Sydney, Australia, 11-13 December 2002. IEEE, Institute of Electrical and Electronics Engineers, Inc (2003) 515-518 P. Lever, H. H. Tan, C. Jagadish Growth of InGaAs quantum dots by metal organic chemical vapour deposition COMMAD 2002 Proceedings, The University of New South Wales, Sydney, Australia, 11-13 December 2002. IEEE Institute of Electrical and Electronics Engineers, Inc (2003) 307-310 N.R. Lobanov, D.C. Weisser, N.J. Welham Re-plating the ANU LINAC Proceedings of 10th Workshop on RF Superconductivity, Tsukuba, Japan, 6-11 September 2001. (2001) C.J. Park, Y.H. Kwon, T.W. Kang, Y.H. Cho, S-H. Choi, R.G. Elliman Cathodoluminescence and photoluminescence of crystalline silicon-epilayer grown on Si/sup +/-implanted (1102) sapphire Mat. Res. Soc. Symp. Proc., Boston, USA, November 2002. Material Research Society (2003) 245-250 M. Petravic, J.S. Williams, P.N.K. Deenapanray Low Energy Ion irradiation of Silicon: Compound Formation and Segragation of Impurities Proceedings of the International Symposia, Washington, 25-30 March 2001. The Electrochemical Society Inc (2001) 147-155 M. Petravic, P.N.K. Deenapanray, C. Demanet, P.N.K. Moon On the Angular Dependence of Profile Broadening in Silicon Under Oxygen and Nitrogen Bombardment Secondary Ion Mass Spectrometry, SIMS XII, Brussels, Belgium, 09/05/1999. (2000) 545-548 A. Polman, R.G. Elliman Optical Gain from Silicon –A Critical Perspective NATO Advanced Research Workshop –Towards a Silicon Laser, Trento, Italy, 21-26 September 2002. Kluwer Dordrecht (2003) 209-222 R. Rao, J.E. Bradby, J.S. Williams Nanoindentation-induced phase transformation in silicon European Nano System 2006 proceedings, Paris, France, . (2006) M.C. Ridgway, C.J. Glover, P. Kluth, B. Johannessen, G.J. 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