This project will investigate the epitaxial growth and properties of ZnO and related materials. It will also study the synthesis and properties of ZnO nanostructures and other heterostructures.

This work examines the mechanical properties of the shells of a range of marine creatures in an effort to understand how increasing ocean acidification influences their mechanical properties.

This project will use temperature-controlled nanoindentation as a tool for engineering a range of novel semiconductor structures.

The deformation mechanisms of a number of different crystal-structures of SiC will be investigated using nanoindentation and electron microscopy.

The structures of amorphous semiconductors will be characterized using an array of sophisticated techniques including nanoindentation, electron microscopy and synchrotron scattering during pressurization in diamond-anvil cells.

This project will study resistive switching in transition-metal oxides which forms the basis of a novel new circuit element called the memister and forms the basis of devices used as nonvolatile memory elements.

This project will study the synthesis, structure and properties of silica and hybrid metal-silica nanostructures fabricated by a simple vapour-liquid-solid technique.

Silica nanowires coated with different metal catalysts will be investigated for catalytic or plasmonic applications.

Silica nanowires coated with Titania and investigated for catalytic and photovoltaic applications

Silica nanowires with gold pea-pod structures will be grown and their growth mechanism investigated.

The project will investigate the photovoltaic properties of III-V semiconductor materials with the incorporation of quantum wells and dots for enhanced efficiencies

The project will investigate the photovoltaic properties of semiconductor nanowires and the fabrication of nanowire solar cells

This project investigates device fabrication technologies for making nanowire electronic and optoelectronic devices

The project will investigate the photovoltaic properties of semiconductor nanowires and the fabrication of nanowire solar cells

This project investigates the fundamental growth mechanism of semiconductor nanowires and how the effect on the nanowire material properties

The project will investigate the photovoltaic properties of III-V semiconductor materials with the incorporation of quantum wells and dots for enhanced efficiencies

This project investigates device fabrication technologies for making nanowire electronic and optoelectronic devices

Ion implantation has been shown to increase the resistivity of semiconductors. This project explores the use of ion implantation in SiC for electrical isolation in devices.

Successful p-type doping seems to be elusive in ZnO, an emerging semiconductor for optoelectronic devices. This project studies ion implantation for doping studies.

The project will investigate the photovoltaic properties of semiconductor nanowires and the fabrication of nanowire solar cells

This project will investigate the epitaxial growth and properties of InAsSb nanostructures. It will also extend to the design and fabrication of mid-IR devices such as laser diodes and photodetectors

This project aims towards the formation of a stable Schottky diode on ZnO using various deposition method including e-beam evaporation, sputter deposition.

This project will investigate the epitaxial growth and properties of ZnO and related materials. It will also study the synthesis and properties of ZnO nanostructures and other heterostructures.

This project investigates the fundamental growth mechanism of semiconductor nanowires and how the effect on the nanowire material properties

This project investigates device fabrication technologies for making nanowire electronic and optoelectronic devices

This project will study the synthesis, structure and properties of silica and hybrid metal-silica nanostructures fabricated by a simple vapour-liquid-solid technique.

Silica nanowires coated with different metal catalysts will be investigated for catalytic or plasmonic applications.

Silica nanowires with gold pea-pod structures will be grown and their growth mechanism investigated.

Investigate fundamental properties and applications of material modifications induced by high energetic heavy ions in insulating and semiconducting materials

This project will investigate the epitaxial growth and properties of InAsSb nanostructures. It will also extend to the design and fabrication of mid-IR devices such as laser diodes and photodetectors

Successful p-type doping seems to be elusive in ZnO, an emerging semiconductor for optoelectronic devices. This project studies ion implantation for doping studies.

Nanoindentation of semiconductors is an area of interest at the ANU. In particular, pressure-induced phases of silicon that can formed at the nanoscale have exciting prospects for future devices. So far, electrical characterization of high pressure crystalline phases have yielded some very exciting results but a detailed understanding of these properties is required. It is intended that these phases will be used to fabricate a series of test devices that can be fabricated at room temperature without complicated processing steps; a very attractive proposition.

An aligned gold nanoparticle array will be developed using nanoindentaion techniques

Until recently germanium has been sidelined as a semiconductor for use in metal-oxide-field-effect-transistors (MOSFETs) despite it having a higher carrier mobility than silicon. The reason for this was the lack of an effective material for use as the gate dielectric. Recently, however, high quality dielectric/Ge interfaces have been produced opening up a rich area of research in high performance Ge-based devices. In order to fabricate these devices much work is required in the area of ion-implantation and thermal processing for fabrication of doped layers for which there has been 4 decades worth for Si. The focus of this project will contribute to the understainding of the interaction of defects and dopants during thermal processing and assess the electronic properties of doped regions.

Crystallization of amorphous silicon (a-Si) is an area of huge interest for the flat panel and silicon solar cell industries. Formation of high quality polycrystalline silicon from a-Si is desirable for high performance of such devices. We have shown that formation of such films by nanoindentation and low-temperature annealing may be a novel means to form high quality material. This project will study the post-indentation crystallization of such films and measure the electrical and optical properties of the final material.

This project will study the synthesis, structure and properties of silica and hybrid metal-silica nanostructures fabricated by a simple vapour-liquid-solid technique.

Silica nanowires coated with different metal catalysts will be investigated for catalytic or plasmonic applications.

An aligned gold nanoparticle array will be developed using nanoindentaion techniques

Silica nanowires coated with Titania and investigated for catalytic and photovoltaic applications

Silica nanowires with gold pea-pod structures will be grown and their growth mechanism investigated.

The project will investigate the photovoltaic properties of III-V semiconductor materials with the incorporation of quantum wells and dots for enhanced efficiencies

This project investigates device fabrication technologies for making nanowire electronic and optoelectronic devices

The project will investigate the photovoltaic properties of semiconductor nanowires and the fabrication of nanowire solar cells

This project will investigate the epitaxial growth and properties of InAsSb nanostructures. It will also extend to the design and fabrication of mid-IR devices such as laser diodes and photodetectors

This project will investigate the epitaxial growth and properties of ZnO and related materials. It will also study the synthesis and properties of ZnO nanostructures and other heterostructures.

This project investigates the fundamental growth mechanism of semiconductor nanowires and how the effect on the nanowire material properties

This project will study resistive switching in transition-metal oxides which forms the basis of a novel new circuit element called the memister and forms the basis of devices used as nonvolatile memory elements.

An aligned gold nanoparticle array will be developed using nanoindentaion techniques

This project will use temperature-controlled nanoindentation as a tool for engineering a range of novel semiconductor structures.

The structures of amorphous semiconductors will be characterized using an array of sophisticated techniques including nanoindentation, electron microscopy and synchrotron scattering during pressurization in diamond-anvil cells.

Silicon carbide has some very stable deep levels present in its as-grown material. This project studies ion implantation induced deep levels with an aim to reveal its origin.

Ion implantation has been shown to increase the resistivity of semiconductors. This project explores the use of ion implantation in SiC for electrical isolation in devices.

Successful p-type doping seems to be elusive in ZnO, an emerging semiconductor for optoelectronic devices. This project studies ion implantation for doping studies.

This project aims towards the formation of a stable Schottky diode on ZnO using various deposition method including e-beam evaporation, sputter deposition.