|
ATOM LITHOGRAPHY
We use neutral atoms (metastable helium) to create nanoscale patterns on silicon substrates. The technique is explained in this diagram.
Here is a scanning electron microscope (SEM) image of a pattern we created using a TEM mask.
|
|
We inspect the surface profile under an atomic force micorscope (AFM), and the topography and surface plot of an edge of the above structure is shown here.
|
|
|
So far we have achieved an edge resolution of ~ 50nm. The AFM measurements are tip resolution limited.
In a Helicon reactor, we have transferred the above wet chemically etched pattern into silicon to a depth of 580nm using plasma etching. Here are some SEM images of such a structure.
|
 |
 |
| The structure has been inspected under the AFM using a sharp silicon tip that has a cone angle of 3°. The measurements show an inclination greater than 86°, indicating an aspect ratio better than 14. |
|
|
AMPL Home
